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2STW1693
High power PNP epitaxial planar bipolar transistor
Features

High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oC
Applications
3 2 1
Audio power amplifier TO-247
Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STW1693 Package TO-247 Packaging Tube
Order code 2STW1693
October 2008
Rev 2
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Electrical ratings
2STW1693
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 C Storage temperature Max. operating junction temperature Value -100 -80 -6 -6 -12 60 -65 to 150 150 Unit V V V A A W C C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case _____________max Value 2.08 Unit C/W
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Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO V(BR)EBO V(BR)CBO V(BR)CEO VCE(sat) (1) VBE (1) hFE fT CCBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Emitter-base breakdown voltage (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = -100 V VEB = -6 V IE = -1 mA IC = -100 A -6 -100 -80 IB = -200 mA IB = -600 mA IC = -6 A VCE = -4 V VCE = -12 V f = 1 MHz 50 20 80 -0.6 -1.5 -1.5 120 MHz pF Min. Typ. Max. -0.1 -0.1 Unit A A V V V V V V
Collector-emitter breakdown IC = -50 mA voltage (IB = 0) Collector-emitter saturation voltage Base-emitter voltage DC current gain Transition frequency Collector-base capacitance (IE = 0) Resistive load IC = -2 A IC = -6 A VCE = -4 V IC = -2 A IC = -0.5 A VCB = -10 V
ton tstg tf
Turn-on time Storage time Fall time
IC = -3 A
VCC = -30 V
0.18 0.6 0.09
ns ns ns
IB1 = -IB2 = -0.3 A
1. Pulsed duration = 300 s, duty cycle 1.5%
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Electrical characteristics
2STW1693
2.1
Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
Base-emitter voltage
Figure 7.
Resistive load switching time (on)
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2STW1693
Figure 8. Resistive load switching time Figure 9. (off)
Electrical characteristics
Collector-base and emitterbase capacitance
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Package mechanical data
2STW1693
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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2STW1693
Package mechanical data
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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Revision history
2STW1693
4
Revision history
Table 5.
Date 10-Oct-2007 02-Oct-2008
Document revision history
Revision 1 2 Initial release Content reworked to improve readability, no technical changes. Changes
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2STW1693
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